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| SMBT3904PN NPN/PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package 4 5 6 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2 Tape loading orientation Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side EHA07193 3 1 VPS05604 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07177 Type SMBT3904PN Maximum Ratings Parameter Marking s3P Pin Configuration Package 1 = E 2 = B 3 = C 4 = E 5 = B 6 = C SOT363 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 5 200 250 150 -65 ... 150 mA mW C Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature Thermal Resistance Thermal resistance, chip case1) RthJC 140 K/W Aug-21-2002 SMBT3904PN Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 0.65 0.85 0.95 VCEsat 0.25 0.4 hFE 40 70 100 60 30 300 ICBO 50 V(BR)EBO 5 V(BR)CBO 40 V(BR)CEO 40 typ. max. Unit V nA - V 1) Pulse test: t < 300s; D < 2% 2 Aug-21-2002 SMBT3904PN Electrical Characteristics at TA=25C, unless otherwise specified Symbol Values Parameter min. AC Characteristics per Transistor Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, Delay time F f = 200 Hz td 35 5 Open-circuit output admittance h21e h22e 100 1 400 60 h12e 0.1 10 h11e 2 12 Ceb 10 Ccb 4.5 fT 250 typ. max. Unit MHz pF k 10-4 S VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA tf 75 tstg 225 tr 35 f = 1 kHz, 3 Aug-21-2002 dB ns SMBT3904PN Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Aug-21-2002 SMBT3904PN DC current gain hFE = f (IC ) VCE = 10V, normalized 10 1 h FE EHP00765 Saturation voltage IC = f (VBEsat, VCEsat) h FE = 10 EHP00756 2 5 C mA 10 2 5 125 C 10 0 25 C 10 1 5 V CE V BE -55 C 5 10 -1 10 -1 5 10 0 5 10 1 mA 10 2 2 10 0 0 0.2 0.4 0.6 C 0.8 1.0 V 1.2 V BE sat , V CE sat Short-circuit forward current transfer ratio h21e = f(IC) VCE = 10V, f = 1MHz 10 3 h 21e EHP00759 Open-circuit reverse voltage transfer ratio h12e = f (IC ) VCE = 10V, f = 1kHz 10 -3 h 12e EHP00758 5 10 2 10 -4 5 5 10 1 -1 10 5 10 0 mA 10 1 10 -5 10 -1 C 5 10 0 mA 10 1 C 5 Aug-21-2002 SMBT3904PN Delay time td = f (IC ) Rise time tr = f (IC) EHP00761 Storage time t stg = f(IC) 10 3 ns t r ,t d tr td 10 2 10 3 ns ts EHP00762 h FE = 10 25 C 125 C 10 2 h FE = 20 10 h FE = 20 10 VCC = 3 V 40 V 15 V 10 1 V BE = 2 V 0V 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C Fall time tf = f (IC) Rise time tr = f (IC) 10 3 ns tf 25 C 125 C EHP00763 10 3 ns tr 25 C EHP00764 VCC = 40 V 10 2 h FE = 20 10 2 125 C VCC = 40 V h FE = 10 10 1 h FE = 10 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C 6 Aug-21-2002 SMBT3904PN Input impedance h11e = f (IC ) VCE = 10V, f = 1kHz 10 2 h 11e k EHP00757 Open-circuit output admittance h22e = f (IC ) VCE = 10V, f = 1MHz 10 2 s h 22e 5 EHP00760 10 1 5 10 1 10 0 5 5 10 -1 10 -1 5 10 0 mA 10 1 10 0 -1 10 5 10 0 C mA C 10 1 7 Aug-21-2002 |
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